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Summary
The main objectives of the project are to develop low power
and low voltage key RF blocks for highly integrated personal
communication terminals and to derive a design methodology for
such RF blocks based on the used CMOS technology. This Design
Experiment is aimed on advanced architecture and circuit design
to allow single chip integration of the base-band and RF section
in CMOS technology for 2nd and 3rd
Generation Mobile and Wireless Systems using the 900MHz and 2GHz
band. The main areas of application for the developed circuits
are for example the UMTS (W-CDMA, TD-CDMA), GSM, DECT and FLEX
paging standards.
By designing, building and testing functional silicon
prototypes, enhanced technologies for manufacture and assembly
are to be developed in the field of advanced low power CMOS
circuits. The prototypes are developed in three steps, component
level, block level and system level, and are designed to serve as
electronic building blocks in real products in wireless and
mobile communications applications. Furthermore, the technology
is considered to be suitable for the design of subsystems in the
market segments of consumer products, automotive and other
industrial applications.
Objectives
- Advanced CMOS RF circuit design including blocks such as
LNA, downconverter mixers & phase shifters, oscillator
and frequency synthesiser, integrated filters, delta sigma
conversion, power amplifier, etc.
- Development of novel models for active and passive
devices as well as fine tuning and validation based on first
silicon fabricates;
- Analysis and specification of sophisticated architectures
to meet in particular low power single chip implementation
;
- Individual block design, simulation, and evaluation
against silicon prototypes;
- Exhaustive system validation based on a complete
prototype for a dedicated system;
- Functional prototypes based on applications for wireless
and mobile communications.
Participants
CSEM (CH), SGS-Thomson (F), CNET (F), Univerity Pavia
(IT), EPFL (CH)
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